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KSC3233
KSC3233
High Speed Switching
* * * * Low Collector-Emitter Saturation Voltage High speed Switching : tF=1s (Max.) @ IC=0.8A Collector-Emitter Voltage : VCEO=400V Lead formed for Surface Mount Applications (D-PAK, " -D " Suffix)
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value 500 400 7 2 0.5 20 1 150 - 55 ~ 150 Units V V V A A W W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCEO BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 10mA, IB = 0 VCB = 400V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A IC = 1A, IB = 0.2A IC = 1A, IB = 0.2A VCC = 200V, IC= 0.8A 1B1 = -I B2 = 0.08A RL = 250 20 8 1 1.5 1 2.5 1 V V s s s Min. 500 400 100 1 Max. Units V V A mA
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC3233
Typical Characteristics
2.0
100
IC[A], COLLECTOR CURRENT
1.6
I B = 18
0m A
VCE = 5V
I B = 12
1.2
hFE, DC CURRENT GAIN
0m A
10
mA I B = 80 A I = 60m
B
0.8
I B = 40mA
IB = 20mA
1
0.4
IB = 10mA
IB = 0
0 2 4 6 8 10
0.0
0.1 1E-3
0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
2.4
IC = 5 I B
2.0
VCE = 5V
IC[A], COLLECTOR CURRENT
1
V BE(sat)
1.6
1.2
0.1
0.8
V CE(sat)
0.4
0.01 1E-3
0.01
0.1
1
10
0.0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter on Voltage
10
32
IC MAX. (Pulse)
m 10
28
3m
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
100ms IC MAX. (DC)
1
s
us 10 us 100 us
s
DC
24
0 50
20
1m s
16
12
0.1
8
4
0.01 1 10 100 1000
0 0 25 50
o
75
100
125
150
175
VCE [V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC3233
Package Demensions
I-PAK
6.60 0.20 5.34 0.20 (0.50) (4.34) (0.50) 0.50 0.10 2.30 0.20
0.20
0.20
0.60
0.70
0.10
6.10
0.20
0.80
0.20
1.80
MAX0.96 0.76 0.10
9.30
0.30
2.30TYP [2.300.20]
2.30TYP [2.300.20]
0.50 0.10
(c)2001 Fairchild Semiconductor Corporation
16.10
0.30
Dimensions in Millimeters
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3

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